Vishay Semiconductor Diodes Division - EGF1B-E3/5CA

KEY Part #: K6457336

EGF1B-E3/5CA Pricing (USD) [455179pcs Stock]

  • 1 pcs$0.08575
  • 6,500 pcs$0.08533

Part Number:
EGF1B-E3/5CA
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1A DO214BA. Rectifiers 100 Volt 1.0A 50ns Glass Passivated
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division EGF1B-E3/5CA electronic components. EGF1B-E3/5CA can be shipped within 24 hours after order. If you have any demands for EGF1B-E3/5CA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGF1B-E3/5CA Product Attributes

Part Number : EGF1B-E3/5CA
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A DO214BA
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214BA
Supplier Device Package : DO-214BA (GF1)
Operating Temperature - Junction : -65°C ~ 175°C

You May Also Be Interested In
  • SS14-E3/61T

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 40V 1A DO214AC. Schottky Diodes & Rectifiers 1.0 Amp 40 Volt

  • ES2B-E3/52T

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2.0 Amp 100 Volt

  • ES2FHE3_A/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 2A DO214AA. Rectifiers 2A,300V,35ns, SMB F.EFF.SM DIODE

  • ES2FHE3_A/H

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 2A DO214AA. Rectifiers 2A,300V,35ns, SMB F.EFF.SM DIODE

  • ES2CHE3_A/H

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 2A DO214AA. Rectifiers 2A,100V,20ns SMB, UF Rect, SMD

  • ES2AHE3_A/H

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20ns SMB, UF Rect, SMD