Taiwan Semiconductor Corporation - 1N4003GA0

KEY Part #: K6458616

1N4003GA0 Pricing (USD) [3224876pcs Stock]

  • 1 pcs$0.01147

Part Number:
1N4003GA0
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
1A200VSTD.GLASS PASSIVATED REC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - JFETs and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation 1N4003GA0 electronic components. 1N4003GA0 can be shipped within 24 hours after order. If you have any demands for 1N4003GA0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4003GA0 Product Attributes

Part Number : 1N4003GA0
Manufacturer : Taiwan Semiconductor Corporation
Description : 1A200VSTD.GLASS PASSIVATED REC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AL, DO-41, Axial
Supplier Device Package : DO-204AL (DO-41)
Operating Temperature - Junction : -55°C ~ 150°C

You May Also Be Interested In
  • BAL74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA

  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode