BAS116E6433HTMA1 Pricing (USD) [3737866pcs Stock]
- 1 pcs$0.01160
- 10,000 pcs$0.01154
- Part Number:
- BAS116E6433HTMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Diodes - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Infineon Technologies BAS116E6433HTMA1 electronic components. BAS116E6433HTMA1 can be shipped within 24 hours after order. If you have any demands for BAS116E6433HTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS116E6433HTMA1 Product Attributes
Part Number :
BAS116E6433HTMA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 80V 250MA SOT23-3
Series :
-
Part Status :
Last Time Buy
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
80V
Current - Average Rectified (Io) :
250mA (DC)
Voltage - Forward (Vf) (Max) @ If :
1.25V @ 150mA
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
1.5µs
Current - Reverse Leakage @ Vr :
5nA @ 75V
Capacitance @ Vr, F :
2pF @ 0V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Supplier Device Package :
SOT-23-3
Operating Temperature - Junction :
150°C (Max)
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