Diodes Incorporated - DMN2990UFZ-7B

KEY Part #: K6419724

DMN2990UFZ-7B Pricing (USD) [871993pcs Stock]

  • 1 pcs$0.04242
  • 10,000 pcs$0.03796

Part Number:
DMN2990UFZ-7B
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 20V .25A X2-DFN0606.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN2990UFZ-7B electronic components. DMN2990UFZ-7B can be shipped within 24 hours after order. If you have any demands for DMN2990UFZ-7B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2990UFZ-7B Product Attributes

Part Number : DMN2990UFZ-7B
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 20V .25A X2-DFN0606
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 990 mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.5nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 55.2pF @ 16V
FET Feature : -
Power Dissipation (Max) : 320mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : X2-DFN0606-3
Package / Case : 3-XFDFN

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