Vishay Siliconix - IRFBC40ASPBF

KEY Part #: K6399428

IRFBC40ASPBF Pricing (USD) [19008pcs Stock]

  • 1 pcs$2.16824
  • 10 pcs$1.93776
  • 100 pcs$1.58903
  • 500 pcs$1.28675
  • 1,000 pcs$1.02955

Part Number:
IRFBC40ASPBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V 6.2A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Transistors - Programmable Unijunction and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix IRFBC40ASPBF electronic components. IRFBC40ASPBF can be shipped within 24 hours after order. If you have any demands for IRFBC40ASPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFBC40ASPBF Product Attributes

Part Number : IRFBC40ASPBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 6.2A D2PAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.2 Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1036pF @ 25V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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