Infineon Technologies - IPW60R125CPFKSA1

KEY Part #: K6392629

IPW60R125CPFKSA1 Pricing (USD) [12638pcs Stock]

  • 1 pcs$3.26118

Part Number:
IPW60R125CPFKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 600V 25A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IPW60R125CPFKSA1 electronic components. IPW60R125CPFKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R125CPFKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R125CPFKSA1 Product Attributes

Part Number : IPW60R125CPFKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 600V 25A TO-247
Series : CoolMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2500pF @ 100V
FET Feature : -
Power Dissipation (Max) : 208W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO247-3
Package / Case : TO-247-3