TK35E10K3(S1SS-Q) Pricing (USD) [70977pcs Stock]
- 1 pcs$0.60894
- 50 pcs$0.60591
- Part Number:
- TK35E10K3(S1SS-Q)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 100V 35A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Power Driver Modules, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK35E10K3(S1SS-Q) electronic components. TK35E10K3(S1SS-Q) can be shipped within 24 hours after order. If you have any demands for TK35E10K3(S1SS-Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35E10K3(S1SS-Q) Product Attributes
Part Number :
TK35E10K3(S1SS-Q)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 100V 35A TO-220AB
Series :
-
Part Status :
Active
FET Type :
-
Technology :
-
Drain to Source Voltage (Vdss) :
-
Current - Continuous Drain (Id) @ 25°C :
-
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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