Diodes Incorporated - DMT2004UFG-13

KEY Part #: K6394716

DMT2004UFG-13 Pricing (USD) [336129pcs Stock]

  • 1 pcs$0.11004
  • 3,000 pcs$0.09778

Part Number:
DMT2004UFG-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 24V 70A POWERDI3333.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Special Purpose, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Diodes Incorporated DMT2004UFG-13 electronic components. DMT2004UFG-13 can be shipped within 24 hours after order. If you have any demands for DMT2004UFG-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT2004UFG-13 Product Attributes

Part Number : DMT2004UFG-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 24V 70A POWERDI3333
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 24V
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 53.7nC @ 10V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 1683pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.3W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerDI3333-8
Package / Case : 8-PowerVDFN