Vishay Semiconductor Diodes Division - BAQ333-TR3

KEY Part #: K6440073

BAQ333-TR3 Pricing (USD) [2200504pcs Stock]

  • 1 pcs$0.01774
  • 10,000 pcs$0.01765

Part Number:
BAQ333-TR3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GP 30V 200MA MICROMELF. Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAQ333-TR3 electronic components. BAQ333-TR3 can be shipped within 24 hours after order. If you have any demands for BAQ333-TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAQ333-TR3 Product Attributes

Part Number : BAQ333-TR3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GP 30V 200MA MICROMELF
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 30V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 1nA @ 15V
Capacitance @ Vr, F : 3pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : 2-SMD, No Lead
Supplier Device Package : MicroMELF
Operating Temperature - Junction : -65°C ~ 175°C

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