Vishay Siliconix - SIR164DP-T1-RE3

KEY Part #: K6393388

SIR164DP-T1-RE3 Pricing (USD) [143424pcs Stock]

  • 1 pcs$0.25789

Part Number:
SIR164DP-T1-RE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 30V 50A POWERPAKSO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Siliconix SIR164DP-T1-RE3 electronic components. SIR164DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIR164DP-T1-RE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR164DP-T1-RE3 Product Attributes

Part Number : SIR164DP-T1-RE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 50A POWERPAKSO-8
Series : TrenchFET® Gen III
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 123nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3950pF @ 15V
FET Feature : -
Power Dissipation (Max) : 69W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8