Manufacturer :
Taiwan Semiconductor Corporation
Description :
DIODE GEN PURP 100V 500MA SUBSMA
Voltage - DC Reverse (Vr) (Max) :
100V
Current - Average Rectified (Io) :
500mA
Voltage - Forward (Vf) (Max) @ If :
1.3V @ 500mA
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
150ns
Current - Reverse Leakage @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
4pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-219AB
Supplier Device Package :
Sub SMA
Operating Temperature - Junction :
-55°C ~ 150°C