Infineon Technologies - BAS16WE6327HTSA1

KEY Part #: K6449442

[739pcs Stock]


    Part Number:
    BAS16WE6327HTSA1
    Manufacturer:
    Infineon Technologies
    Detailed description:
    DIODE GEN PURP 80V 250MA SOT323.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Diodes - Zener - Single and Power Driver Modules ...
    Competitive Advantage:
    We specialize in Infineon Technologies BAS16WE6327HTSA1 electronic components. BAS16WE6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BAS16WE6327HTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BAS16WE6327HTSA1 Product Attributes

    Part Number : BAS16WE6327HTSA1
    Manufacturer : Infineon Technologies
    Description : DIODE GEN PURP 80V 250MA SOT323
    Series : -
    Part Status : Obsolete
    Diode Type : Standard
    Voltage - DC Reverse (Vr) (Max) : 80V
    Current - Average Rectified (Io) : 250mA (DC)
    Voltage - Forward (Vf) (Max) @ If : 1.25V @ 150mA
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 4ns
    Current - Reverse Leakage @ Vr : 1µA @ 75V
    Capacitance @ Vr, F : 2pF @ 0V, 1MHz
    Mounting Type : Surface Mount
    Package / Case : SC-70, SOT-323
    Supplier Device Package : PG-SOT323-3
    Operating Temperature - Junction : 150°C (Max)

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