IXFN30N120P Pricing (USD) [2124pcs Stock]
- 1 pcs$21.51707
- 10 pcs$21.41002
- Part Number:
- IXFN30N120P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1200V 30A SOT-227B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Thyristors - TRIACs and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in IXYS IXFN30N120P electronic components. IXFN30N120P can be shipped within 24 hours after order. If you have any demands for IXFN30N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN30N120P Product Attributes
Part Number :
IXFN30N120P
Manufacturer :
IXYS
Description :
MOSFET N-CH 1200V 30A SOT-227B
Series :
Polar™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
350 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
310nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
890W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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