Infineon Technologies - IRFR4105PBF

KEY Part #: K6413737

IRFR4105PBF Pricing (USD) [12997pcs Stock]

  • 3,000 pcs$0.18662

Part Number:
IRFR4105PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 55V 27A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRFR4105PBF electronic components. IRFR4105PBF can be shipped within 24 hours after order. If you have any demands for IRFR4105PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR4105PBF Product Attributes

Part Number : IRFR4105PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 27A DPAK
Series : HEXFET®
Part Status : Discontinued at Digi-Key
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 45 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 68W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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