SUD35N10-26P-GE3 Pricing (USD) [84291pcs Stock]
- 1 pcs$0.46388
- 2,000 pcs$0.43461
- Part Number:
- SUD35N10-26P-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 100V 35A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SUD35N10-26P-GE3 electronic components. SUD35N10-26P-GE3 can be shipped within 24 hours after order. If you have any demands for SUD35N10-26P-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUD35N10-26P-GE3 Product Attributes
Part Number :
SUD35N10-26P-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 100V 35A DPAK
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
7V, 10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 12V
FET Feature :
-
Power Dissipation (Max) :
8.3W (Ta), 83W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252, (D-Pak)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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