RFP12N10L Pricing (USD) [87402pcs Stock]
- 1 pcs$0.44737
- 10 pcs$0.39678
- 100 pcs$0.29662
- 500 pcs$0.23004
- 1,000 pcs$0.18161
- Part Number:
- RFP12N10L
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 12A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor RFP12N10L electronic components. RFP12N10L can be shipped within 24 hours after order. If you have any demands for RFP12N10L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFP12N10L Product Attributes
Part Number :
RFP12N10L
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 12A TO-220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
200 mOhm @ 12A, 5V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
60W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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