Vishay Semiconductor Diodes Division - V20120S-E3/4W

KEY Part #: K6427336

V20120S-E3/4W Pricing (USD) [151337pcs Stock]

  • 1 pcs$0.24440
  • 1,000 pcs$0.22250

Part Number:
V20120S-E3/4W
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE SCHOTTKY 120V 20A TO220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Power Driver Modules, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division V20120S-E3/4W electronic components. V20120S-E3/4W can be shipped within 24 hours after order. If you have any demands for V20120S-E3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V20120S-E3/4W Product Attributes

Part Number : V20120S-E3/4W
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE SCHOTTKY 120V 20A TO220AB
Series : TMBS®
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 120V
Current - Average Rectified (Io) : 20A
Voltage - Forward (Vf) (Max) @ If : 1.12V @ 20A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 300µA @ 120V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220AB
Operating Temperature - Junction : -40°C ~ 150°C

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