DMT6004SCT Pricing (USD) [42509pcs Stock]
- 1 pcs$0.86965
- 50 pcs$0.70191
- 100 pcs$0.63175
- 500 pcs$0.49136
- 1,000 pcs$0.40712
- Part Number:
- DMT6004SCT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 60V 100A TO220-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMT6004SCT electronic components. DMT6004SCT can be shipped within 24 hours after order. If you have any demands for DMT6004SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6004SCT Product Attributes
Part Number :
DMT6004SCT
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 60V 100A TO220-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.65 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
95.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4556pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
2.3W (Ta), 113W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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