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  5. FDI2532

ON Semiconductor - FDI2532

KEY Part #: K6411273

[8484pcs Stock]

    Part Number:
    FDI2532
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 150V 79A TO-262AB.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Zener - Arrays ...
    Competitive Advantage:
    We specialize in ON Semiconductor FDI2532 electronic components. FDI2532 can be shipped within 24 hours after order. If you have any demands for FDI2532, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDI2532 Product Attributes

    Part Number : FDI2532
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 150V 79A TO-262AB
    Series : PowerTrench®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 150V
    Current - Continuous Drain (Id) @ 25°C : 8A (Ta), 79A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
    Rds On (Max) @ Id, Vgs : 16 mOhm @ 33A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 107nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 5870pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 310W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK (TO-262)
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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