NVTFS6H850NTAG Pricing (USD) [190901pcs Stock]
- 1 pcs$0.19375
- Part Number:
- NVTFS6H850NTAG
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 80V 68A TRENCH 8WDFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVTFS6H850NTAG electronic components. NVTFS6H850NTAG can be shipped within 24 hours after order. If you have any demands for NVTFS6H850NTAG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVTFS6H850NTAG Product Attributes
Part Number :
NVTFS6H850NTAG
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 80V 68A TRENCH 8WDFN
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
11A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1140pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
3.2W (Ta), 107W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-WDFN (3.3x3.3)
Package / Case :
8-PowerWDFN
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