Toshiba Semiconductor and Storage - SSM6J511NU,LF

KEY Part #: K6417367

SSM6J511NU,LF Pricing (USD) [691214pcs Stock]

  • 1 pcs$0.05916
  • 3,000 pcs$0.05886

Part Number:
SSM6J511NU,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET P-CH 12V 14A UDFN6B.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6J511NU,LF electronic components. SSM6J511NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6J511NU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
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SSM6J511NU,LF Product Attributes

Part Number : SSM6J511NU,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 12V 14A UDFN6B
Series : U-MOSVII
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 9.1 mOhm @ 4A, 8V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 47nC @ 4.5V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 3350pF @ 6V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-UDFNB (2x2)
Package / Case : 6-WDFN Exposed Pad