DMN10H099SFG-7 Pricing (USD) [315758pcs Stock]
- 1 pcs$0.11714
- 2,000 pcs$0.10409
- Part Number:
- DMN10H099SFG-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 100V 4.2A PWRDI3333.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - RF and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN10H099SFG-7 electronic components. DMN10H099SFG-7 can be shipped within 24 hours after order. If you have any demands for DMN10H099SFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN10H099SFG-7 Product Attributes
Part Number :
DMN10H099SFG-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 100V 4.2A PWRDI3333
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25.2nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1172pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
980mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI3333-8
Package / Case :
8-PowerWDFN
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