Vishay Siliconix - SI4590DY-T1-GE3

KEY Part #: K6522547

SI4590DY-T1-GE3 Pricing (USD) [227995pcs Stock]

  • 1 pcs$0.16223
  • 2,500 pcs$0.15266

Part Number:
SI4590DY-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N/P CHAN 100V SO8 DUAL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs, Transistors - JFETs, Diodes - Zener - Arrays, Diodes - RF and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Vishay Siliconix SI4590DY-T1-GE3 electronic components. SI4590DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4590DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4590DY-T1-GE3 Product Attributes

Part Number : SI4590DY-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N/P CHAN 100V SO8 DUAL
Series : TrenchFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : -
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 3.4A, 2.8A
Rds On (Max) @ Id, Vgs : 57 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 50V
Power - Max : 2.4W, 3.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO