Vishay Siliconix - SUM110P06-08L-E3

KEY Part #: K6397754

SUM110P06-08L-E3 Pricing (USD) [35424pcs Stock]

  • 1 pcs$1.10930
  • 800 pcs$1.10378

Part Number:
SUM110P06-08L-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 60V 110A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - JFETs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SUM110P06-08L-E3 electronic components. SUM110P06-08L-E3 can be shipped within 24 hours after order. If you have any demands for SUM110P06-08L-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUM110P06-08L-E3 Product Attributes

Part Number : SUM110P06-08L-E3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 60V 110A D2PAK
Series : TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 240nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9200pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.75W (Ta), 272W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (D2Pak)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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