SSM6N56FE,LM Pricing (USD) [1113349pcs Stock]
- 1 pcs$0.03673
- 4,000 pcs$0.03654
- Part Number:
- SSM6N56FE,LM
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET 2N-CH 20V 0.8A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Thyristors - SCRs, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM6N56FE,LM electronic components. SSM6N56FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6N56FE,LM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N56FE,LM Product Attributes
Part Number :
SSM6N56FE,LM
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET 2N-CH 20V 0.8A
Series :
-
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
800mA
Rds On (Max) @ Id, Vgs :
235 mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
55pF @ 10V
Power - Max :
150mW
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-563, SOT-666
Supplier Device Package :
ES6
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