Part Number :
PMDPB42UN,115
Manufacturer :
NXP USA Inc.
Description :
MOSFET 2N-CH 20V 3.9A HUSON6
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3.9A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
185pF @ 10V
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
6-UDFN Exposed Pad
Supplier Device Package :
DFN2020-6