NXP USA Inc. - PMDPB42UN,115

KEY Part #: K6523403

[4177pcs Stock]


    Part Number:
    PMDPB42UN,115
    Manufacturer:
    NXP USA Inc.
    Detailed description:
    MOSFET 2N-CH 20V 3.9A HUSON6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Power Driver Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - RF ...
    Competitive Advantage:
    We specialize in NXP USA Inc. PMDPB42UN,115 electronic components. PMDPB42UN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB42UN,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMDPB42UN,115 Product Attributes

    Part Number : PMDPB42UN,115
    Manufacturer : NXP USA Inc.
    Description : MOSFET 2N-CH 20V 3.9A HUSON6
    Series : -
    Part Status : Obsolete
    FET Type : 2 N-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 3.9A
    Rds On (Max) @ Id, Vgs : 50 mOhm @ 3.9A, 4.5V
    Vgs(th) (Max) @ Id : 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 185pF @ 10V
    Power - Max : 510mW
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 6-UDFN Exposed Pad
    Supplier Device Package : DFN2020-6