Infineon Technologies - IPP100N04S2L03AKSA2

KEY Part #: K6402418

[2710pcs Stock]


    Part Number:
    IPP100N04S2L03AKSA2
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 40V 100A TO220-3.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules and Transistors - IGBTs - Modules ...
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    We specialize in Infineon Technologies IPP100N04S2L03AKSA2 electronic components. IPP100N04S2L03AKSA2 can be shipped within 24 hours after order. If you have any demands for IPP100N04S2L03AKSA2, Please submit a Request for Quotation here or send us an email:
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    ISO-13485
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    ISO-45001-2018

    IPP100N04S2L03AKSA2 Product Attributes

    Part Number : IPP100N04S2L03AKSA2
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 40V 100A TO220-3
    Series : OptiMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 40V
    Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 80A, 10V
    Vgs(th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 230nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 6000pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 300W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : PG-TO220-3-1
    Package / Case : TO-220-3