IXFA4N100Q-TRL Pricing (USD) [25241pcs Stock]
- 1 pcs$1.88710
- 800 pcs$1.87771
- Part Number:
- IXFA4N100Q-TRL
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 4A TO-263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFA4N100Q-TRL electronic components. IXFA4N100Q-TRL can be shipped within 24 hours after order. If you have any demands for IXFA4N100Q-TRL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA4N100Q-TRL Product Attributes
Part Number :
IXFA4N100Q-TRL
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 4A TO-263
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263 (IXFA)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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