IXYS - IXFA4N100Q-TRL

KEY Part #: K6399277

IXFA4N100Q-TRL Pricing (USD) [25241pcs Stock]

  • 1 pcs$1.88710
  • 800 pcs$1.87771

Part Number:
IXFA4N100Q-TRL
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1000V 4A TO-263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in IXYS IXFA4N100Q-TRL electronic components. IXFA4N100Q-TRL can be shipped within 24 hours after order. If you have any demands for IXFA4N100Q-TRL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA4N100Q-TRL Product Attributes

Part Number : IXFA4N100Q-TRL
Manufacturer : IXYS
Description : MOSFET N-CH 1000V 4A TO-263
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1050pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (IXFA)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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