IXFH11N80 Pricing (USD) [9504pcs Stock]
- 1 pcs$5.01190
- 30 pcs$4.98696
- Part Number:
- IXFH11N80
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 800V 11A TO-247AD.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in IXYS IXFH11N80 electronic components. IXFH11N80 can be shipped within 24 hours after order. If you have any demands for IXFH11N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH11N80 Product Attributes
Part Number :
IXFH11N80
Manufacturer :
IXYS
Description :
MOSFET N-CH 800V 11A TO-247AD
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
950 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AD (IXFH)
Package / Case :
TO-247-3
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