[1652pcs Stock]
- Part Number:
- S3BHE3/9AT
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 100V 3A DO214AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Diodes - Zener - Single and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division S3BHE3/9AT electronic components. S3BHE3/9AT can be shipped within 24 hours after order. If you have any demands for S3BHE3/9AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
S3BHE3/9AT Product Attributes
Part Number :
S3BHE3/9AT
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 100V 3A DO214AB
Series :
-
Part Status :
Obsolete
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
100V
Current - Average Rectified (Io) :
3A
Voltage - Forward (Vf) (Max) @ If :
1.15V @ 2.5A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
2.5µs
Current - Reverse Leakage @ Vr :
10µA @ 100V
Capacitance @ Vr, F :
60pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-214AB, SMC
Supplier Device Package :
DO-214AB (SMC)
Operating Temperature - Junction :
-55°C ~ 150°C
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