Toshiba Semiconductor and Storage - TK5Q60W,S1VQ

KEY Part #: K6397766

TK5Q60W,S1VQ Pricing (USD) [55337pcs Stock]

  • 1 pcs$0.77767
  • 75 pcs$0.62776
  • 150 pcs$0.56499
  • 525 pcs$0.43944
  • 1,050 pcs$0.34443

Part Number:
TK5Q60W,S1VQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N CH 600V 5.4A IPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - TRIACs, Diodes - Rectifiers - Single, Diodes - RF, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK5Q60W,S1VQ electronic components. TK5Q60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK5Q60W,S1VQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK5Q60W,S1VQ Product Attributes

Part Number : TK5Q60W,S1VQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 600V 5.4A IPAK
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 3.7V @ 270µA
Gate Charge (Qg) (Max) @ Vgs : 10.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 300V
FET Feature : Super Junction
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I-PAK
Package / Case : TO-251-3 Stub Leads, IPak

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