Toshiba Semiconductor and Storage - TPN3R704PL,L1Q

KEY Part #: K6417812

TPN3R704PL,L1Q Pricing (USD) [409821pcs Stock]

  • 1 pcs$0.09621
  • 5,000 pcs$0.09573

Part Number:
TPN3R704PL,L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 40V 80A TSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Single ...
Competitive Advantage:
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TPN3R704PL,L1Q Product Attributes

Part Number : TPN3R704PL,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 40V 80A TSON
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 0.2mA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2500pF @ 20V
FET Feature : -
Power Dissipation (Max) : 630mW (Ta), 86W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN