FDU6N50TU Pricing (USD) [174560pcs Stock]
- 1 pcs$0.21295
- 5,040 pcs$0.21189
- Part Number:
- FDU6N50TU
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 500V 6A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDU6N50TU electronic components. FDU6N50TU can be shipped within 24 hours after order. If you have any demands for FDU6N50TU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDU6N50TU Product Attributes
Part Number :
FDU6N50TU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 500V 6A IPAK
Series :
UniFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16.6nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
940pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
89W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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