APT11N80BC3G Pricing (USD) [15456pcs Stock]
- 1 pcs$2.93506
- 10 pcs$2.62084
- 100 pcs$2.14894
- 500 pcs$1.74012
- 1,000 pcs$1.46758
- Part Number:
- APT11N80BC3G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 800V 11A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Power Driver Modules and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT11N80BC3G electronic components. APT11N80BC3G can be shipped within 24 hours after order. If you have any demands for APT11N80BC3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT11N80BC3G Product Attributes
Part Number :
APT11N80BC3G
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 800V 11A TO-247
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1585pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
156W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 [B]
Package / Case :
TO-247-3
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