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  5. 2SJ661-1E

ON Semiconductor - 2SJ661-1E

KEY Part #: K6398120

2SJ661-1E Pricing (USD) [39626pcs Stock]

  • 1 pcs$0.98672
  • 500 pcs$0.52991
Part Number:
2SJ661-1E
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 60V 38A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor 2SJ661-1E electronic components. 2SJ661-1E can be shipped within 24 hours after order. If you have any demands for 2SJ661-1E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SJ661-1E Product Attributes

Part Number : 2SJ661-1E
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 60V 38A
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 39 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4360pF @ 20V
FET Feature : -
Power Dissipation (Max) : 1.65W (Ta), 65W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262-3
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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