[859pcs Stock]
- Part Number:
- TPC8032-H(TE12LQM)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 30V 15A SOP8 2-6J1B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPC8032-H(TE12LQM) electronic components. TPC8032-H(TE12LQM) can be shipped within 24 hours after order. If you have any demands for TPC8032-H(TE12LQM), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8032-H(TE12LQM) Product Attributes
Part Number :
TPC8032-H(TE12LQM)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 30V 15A SOP8 2-6J1B
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
6.5 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
2846pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP (5.5x6.0)
Package / Case :
8-SOIC (0.173", 4.40mm Width)
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