TK6Q60W,S1VQ Pricing (USD) [63944pcs Stock]
- 1 pcs$0.67600
- 75 pcs$0.67264
- Part Number:
- TK6Q60W,S1VQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N CH 600V 6.2A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK6Q60W,S1VQ electronic components. TK6Q60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK6Q60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6Q60W,S1VQ Product Attributes
Part Number :
TK6Q60W,S1VQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 600V 6.2A IPAK
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
820 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
390pF @ 300V
FET Feature :
Super Junction
Power Dissipation (Max) :
60W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Stub Leads, IPak
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