Diodes Incorporated - DMN3190LDW-13

KEY Part #: K6522500

DMN3190LDW-13 Pricing (USD) [1192875pcs Stock]

  • 1 pcs$0.03101
  • 10,000 pcs$0.02784

Part Number:
DMN3190LDW-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 2N-CH 30V 1A SOT363.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN3190LDW-13 electronic components. DMN3190LDW-13 can be shipped within 24 hours after order. If you have any demands for DMN3190LDW-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3190LDW-13 Product Attributes

Part Number : DMN3190LDW-13
Manufacturer : Diodes Incorporated
Description : MOSFET 2N-CH 30V 1A SOT363
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 1A
Rds On (Max) @ Id, Vgs : 190 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id : 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 87pF @ 20V
Power - Max : 320mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : SOT-363