Infineon Technologies - IPD100N04S4L02ATMA1

KEY Part #: K6418896

IPD100N04S4L02ATMA1 Pricing (USD) [81936pcs Stock]

  • 1 pcs$0.47721
  • 2,500 pcs$0.34916

Part Number:
IPD100N04S4L02ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CHANNEL30/40V.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - Special Purpose, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IPD100N04S4L02ATMA1 electronic components. IPD100N04S4L02ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD100N04S4L02ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD100N04S4L02ATMA1 Product Attributes

Part Number : IPD100N04S4L02ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CHANNEL30/40V
Series : *
Part Status : Active
FET Type : -
Technology : -
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -

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