IRFR9N20DTRPBF Pricing (USD) [194329pcs Stock]
- 1 pcs$0.19033
- 2,000 pcs$0.18272
- Part Number:
- IRFR9N20DTRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 9.4A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFR9N20DTRPBF electronic components. IRFR9N20DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFR9N20DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR9N20DTRPBF Product Attributes
Part Number :
IRFR9N20DTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 9.4A DPAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
560pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
86W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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