Infineon Technologies - IPB60R040C7ATMA1

KEY Part #: K6416290

IPB60R040C7ATMA1 Pricing (USD) [12957pcs Stock]

  • 1 pcs$3.26659
  • 1,000 pcs$3.25034

Part Number:
IPB60R040C7ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 650V 50A TO263-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs and Transistors - IGBTs - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB60R040C7ATMA1 Product Attributes

Part Number : IPB60R040C7ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 50A TO263-3
Series : CoolMOS™ C7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id : 4V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs : 107nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4340pF @ 400V
FET Feature : -
Power Dissipation (Max) : 227W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO263-3
Package / Case : TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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