IXFN120N65X2 Pricing (USD) [3344pcs Stock]
- 1 pcs$14.25111
- 10 pcs$13.18042
- 100 pcs$11.25689
- Part Number:
- IXFN120N65X2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 650V 108A SOT-227.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - Special Purpose, Thyristors - TRIACs, Transistors - IGBTs - Single and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFN120N65X2 electronic components. IXFN120N65X2 can be shipped within 24 hours after order. If you have any demands for IXFN120N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN120N65X2 Product Attributes
Part Number :
IXFN120N65X2
Manufacturer :
IXYS
Description :
MOSFET N-CH 650V 108A SOT-227
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
24 mOhm @ 54A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
225nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
15500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
890W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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