Infineon Technologies - SPP11N60CFDXKSA1

KEY Part #: K6409435

[282pcs Stock]


    Part Number:
    SPP11N60CFDXKSA1
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 650V 11A TO-220.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Single ...
    Competitive Advantage:
    We specialize in Infineon Technologies SPP11N60CFDXKSA1 electronic components. SPP11N60CFDXKSA1 can be shipped within 24 hours after order. If you have any demands for SPP11N60CFDXKSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPP11N60CFDXKSA1 Product Attributes

    Part Number : SPP11N60CFDXKSA1
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 650V 11A TO-220
    Series : CoolMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 650V
    Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 440 mOhm @ 7A, 10V
    Vgs(th) (Max) @ Id : 5V @ 500µA
    Gate Charge (Qg) (Max) @ Vgs : 64nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 125W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : PG-TO220-3-1
    Package / Case : TO-220-3