[13443pcs Stock]
- Part Number:
- GP1M009A070F
- Manufacturer:
- Global Power Technologies Group
- Detailed description:
- MOSFET N-CH 700V 9A TO220F.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Global Power Technologies Group GP1M009A070F electronic components. GP1M009A070F can be shipped within 24 hours after order. If you have any demands for GP1M009A070F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M009A070F Product Attributes
Part Number :
GP1M009A070F
Manufacturer :
Global Power Technologies Group
Description :
MOSFET N-CH 700V 9A TO220F
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
700V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1944pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
52W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220F
Package / Case :
TO-220-3 Full Pack
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