ON Semiconductor - FDP090N10

KEY Part #: K6399066

FDP090N10 Pricing (USD) [32584pcs Stock]

  • 1 pcs$1.07870
  • 10 pcs$0.97626
  • 100 pcs$0.78440
  • 500 pcs$0.61007
  • 1,000 pcs$0.50549

Part Number:
FDP090N10
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 100V 75A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Special Purpose and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in ON Semiconductor FDP090N10 electronic components. FDP090N10 can be shipped within 24 hours after order. If you have any demands for FDP090N10, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP090N10 Product Attributes

Part Number : FDP090N10
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 100V 75A TO-220
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 116nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8225pF @ 25V
FET Feature : -
Power Dissipation (Max) : 208W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3

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