Vishay Siliconix - SISH116DN-T1-GE3

KEY Part #: K6411860

SISH116DN-T1-GE3 Pricing (USD) [107279pcs Stock]

  • 1 pcs$0.34478

Part Number:
SISH116DN-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 40V PPAK 1212-8SH.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Thyristors - SCRs and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Vishay Siliconix SISH116DN-T1-GE3 electronic components. SISH116DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH116DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISH116DN-T1-GE3 Product Attributes

Part Number : SISH116DN-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 40V PPAK 1212-8SH
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.8 mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 1212-8SH
Package / Case : PowerPAK® 1212-8SH

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