FDFMA3N109 Pricing (USD) [296432pcs Stock]
- 1 pcs$0.12540
- 3,000 pcs$0.12478
- Part Number:
- FDFMA3N109
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 30V 2.9A MICRO2X2.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - JFETs, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDFMA3N109 electronic components. FDFMA3N109 can be shipped within 24 hours after order. If you have any demands for FDFMA3N109, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDFMA3N109 Product Attributes
Part Number :
FDFMA3N109
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 30V 2.9A MICRO2X2
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
123 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 15V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
1.5W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-MicroFET (2x2)
Package / Case :
6-VDFN Exposed Pad
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