Infineon Technologies - IPA045N10N3GXKSA1

KEY Part #: K6399380

IPA045N10N3GXKSA1 Pricing (USD) [32929pcs Stock]

  • 1 pcs$1.26040
  • 10 pcs$1.08162
  • 100 pcs$0.86915
  • 500 pcs$0.67598
  • 1,000 pcs$0.56010

Part Number:
IPA045N10N3GXKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 64A TO220-FP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Infineon Technologies IPA045N10N3GXKSA1 electronic components. IPA045N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA045N10N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA045N10N3GXKSA1 Product Attributes

Part Number : IPA045N10N3GXKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 64A TO220-FP
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 64A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 117nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8410pF @ 50V
FET Feature : -
Power Dissipation (Max) : 39W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-FP
Package / Case : TO-220-3 Full Pack