DMG7N65SCT Pricing (USD) [80028pcs Stock]
- 1 pcs$0.48859
- 50 pcs$0.45882
- Part Number:
- DMG7N65SCT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 650V 7.7A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Transistors - Special Purpose, Power Driver Modules, Transistors - IGBTs - Arrays and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG7N65SCT electronic components. DMG7N65SCT can be shipped within 24 hours after order. If you have any demands for DMG7N65SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG7N65SCT Product Attributes
Part Number :
DMG7N65SCT
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 650V 7.7A TO220AB
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25.2nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
886pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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