SIRA00DP-T1-RE3 Pricing (USD) [105835pcs Stock]
- 1 pcs$0.34948
- Part Number:
- SIRA00DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 30V 100A POWERPAKSO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Power Driver Modules, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIRA00DP-T1-RE3 electronic components. SIRA00DP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIRA00DP-T1-RE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIRA00DP-T1-RE3 Product Attributes
Part Number :
SIRA00DP-T1-RE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 30V 100A POWERPAKSO
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
11700pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
104W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® SO-8
Package / Case :
PowerPAK® SO-8
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